Subversion Repositories Electronics.Rangefider

*****************************************************************
*                                                                               *
* GaN Systems Inc. Power Transistors                            *
* PSpice Library for GaN Transistors                            *
* Version 4.1                                                   *
*                                                               *
*****************************************************************
*****************************************************************
*                                                               *
* Models provided by GaN Systems Inc. are not warranted by      *
* GaN Systems Inc. as                                           *
* fully representing all of the specifications and operating    *
* characteristics of the semiconductor product to which the     *
* model relates. The model describe the characteristics of a    *
* typical device.                                               *
* In all cases, the current data sheet information for a given  *
* device is the final design guideline and the only actual      *
* performance specification.                                    *
* Altough models can be a useful tool in evaluating device      *
* performance, they cannot model exact device performance under *
* all conditions, nor are they intended to replace bread-       *
* boarding for final verification. GaN Systems Inc. therefore   *
* does not assume any liability arising from their use.         *
* GaN Systems Inc. reserves the right to change models without  *
* prior notice.                                                 *
*                                                               *
* This library contains models of the following GaN Systems     *
* Inc. transistors:                                             *
*                                                               *
*   GS61008P                                                    *
*****************************************************************
*Level 3. In addition to Level 2, this level includes the stray inductance in the package.
*$
*$
.subckt GaN_PSpice_GS61008P_L3V4P1 gatein drainin sourcein source_S TC TJ
*
*
.param rTC=-0.004  gan_res={3.38e-03}           metal_res={2.0e-3}   gtc=3.275 sh_s=0.239   sh_d=0.761
.param  cur=0.089   x0_0=1.1      x0_1=1.1  x0_2=1.0  thr=1.8  itc=0.83 atc=180.15
*
*
.param tscl = 0.5
Cth_1 0 TJ {(7.0e-4)*tscl}
Cth_2 0 T11  {(6.7e-3)*tscl}
Cth_3 0 T22 {(5.9e-3)*tscl}
Cth_4 0 T33 {(1.8e-3)*tscl}
*
*
Rth_1 T11 TJ {0.017}
Rth_2 T22 T11 {0.253}
Rth_3 T33 T22 {0.264}
Rth_4 TC T33 {0.017}
*
*
gdtemp 0 TJ value { (if(v(drain,source)>0,
+   (cur*(-(v(TJ)-25)*itc+atc)*log(1.0+exp(26*(v(gate,source)-thr)))*
+       v(drain,source)/(1 + max(x0_0+x0_1*(v(gate,source)+x0_2),0.2)*v(drain,source)))*
+       v(drain,source),

+   (cur*(-(v(TJ)-25)*itc+atc)*log(1.0+exp(26*(v(gate,drain)-thr)))*
+       v(source, drain)/(1 + max(x0_0+x0_1*(v(gate,drain)+x0_2),0.2)*v(source,drain)))*
+       v(drain,source))) }
*
*
ld drainin drain3 {370e-12}
ERES_d drain3 3_d value={I(VSENSE_d)*sh_d* (metal_res*(1-1*rTc*(V(TJ)-25)) + gan_res*PWR((v(TJ)+273)/298,gtc)) }
VSENSE_d 3_d drain DC 0
*
*
VSENSE_s 3_s source DC 0
ERES_s source3 3_s value={I(VSENSE_s)* sh_s * (metal_res*(1-1*rTc*(V(TJ)-25)) + gan_res*PWR((v(TJ)+273)/298,gtc)) }
Lcs source3 source3b {20e-12}
Ls sourcein source3b {150e-12}
*
*
RSS source_S1 source3b {0.001}
LSS source_S source_S1 {0.2e-9}
rg gatein gate1 {1.5}
Lg gate1 gate {3.1e-9}
*
*
Rcsdconv drain source {4000Meg}
Rcgsconv gate source {4000Meg}
Rcgdconv gate drain {4000Meg}
*
*
gswitch drain2 source2 value { (if(v(drain2,source2)>0,
+   (cur*(-(v(TJ)-25)*itc+atc)*log(1.0+exp(26*(v(gate,source2)-thr)))*
+       v(drain2,source2)/(1 + max(x0_0+x0_1*(v(gate,source2)+x0_2),0.2)*v(drain2,source2))),

+   (-cur*(-(v(TJ)-25)*itc+atc)*log(1.0+exp(26*(v(gate,drain2)-thr)))*
+       v(source2, drain2)/(1 + max(x0_0+x0_1*(v(gate,drain2)+x0_2),0.2)*v(source2,drain2))))) }
*
*
R_drain2 drain2 drain {(1e-7)}
R_source2 source2 source {(1e-7)}
*
*
C_GS1  gate source      {6.04e-10}
E_IS1 tl_gs1 bl_gs1     Value = { ( - 14.08e-11*(1-1./(1+exp(0.32*(-v(drain, source)+8.0))))
+                       - 1.653e-11*(1-1./(1+exp(0.029*(-v(drain, source)+80.0))))
+                                   - 1.5e-10*(-1+1./(1+exp(0.16*(-v(drain, source)-2.1)))) )*v(gate,source) }
V_INGS1 br_gs1 bl_gs1   {0.0}
C_IGS1  br_gs1 tr_gs1   {1.0e-6}
R_IGS1  tr_gs1 tl_gs1   {1e-3}
F_IGS1  gate source     V_INGS1 {1.0e6}
R_IGS12 bl_gs1 source   {100Meg}
*
*
E_IGS2  tl_gs2 bl_gs2   Value = { ( 1.0e-010*log(1+exp(6.1*(v(gate,source)-2.2)))) }
V_INGS2 br_gs2 bl_gs2   {0.0}
C_IGS2  br_gs2 tr_gs2   {1.0e-6}
R_IGS2  tr_gs2 tl_gs2   {1e-3}
F_IGS2  gate source     V_INGS2 {1.0e6}
R_IGS22 bl_gs2 source   {100Meg}
*
*
C_GD  gate drain        {0.6e-012}
E_IGD   tl_gd bl_gd             Value = { (44e-11*log(1+exp(0.32*(v(gate, drain)+8)))
+                                                 + 57e-11*log(1+exp(0.029*(v(gate, drain)+80))) ) }
V_INGD br_gd bl_gd      {0.0}
C_IGD  br_gd tr_gd      {1.0e-6}
R_IGD  tr_gd tl_gd      {1e-3}
F_IGD  gate drain       V_INGD {1.0e6}
R_IGD2 bl_gd drain      {100Meg}
*
*
C_SD  source drain  {2.18e-010}
E_ISD   tl_sd bl_sd             Value = { (44e-11*log(1+exp(0.32*(v(source2,drain2)+8)))
+                                                + 57e-11*log(1+exp(0.029*(v(source2,drain2)+80)))
+                                                + 1.95e-10*log(1+exp(1.19*(v(source2,drain2)+16)))
+                                                + 1.69e-9*log(1+exp(0.07*(v(source2,drain2)+31))) ) }
V_INSD br_sd bl_sd      {0.0}
C_ISD  br_sd tr_sd      {1.0e-6}
R_ISD  tr_sd tl_sd      {1e-3}
F_ISD  source2 drain2   V_INSD {1.0e6}
R_ISD2 bl_sd drain2 {100Meg}
*
*
.ends
*$