Subversion Repositories Electronics.Rangefider

Version 4
SHEET 1 1412 712
WIRE 1200 -400 144 -400
WIRE 1200 -336 464 -336
WIRE -288 -320 -432 -320
WIRE 464 -288 464 -336
WIRE 144 -272 144 -400
WIRE 416 -272 144 -272
WIRE -288 -256 -288 -320
WIRE 416 -224 384 -224
WIRE 16 -192 0 -192
WIRE 144 -192 144 -272
WIRE 16 -176 0 -192
WIRE 16 -176 16 -192
WIRE -288 -160 -288 -192
WIRE -16 -160 16 -192
WIRE -16 -160 -32 -176
WIRE -64 -144 -32 -176
WIRE 16 -144 0 -144
WIRE 16 -128 0 -144
WIRE 16 -128 16 -144
WIRE -16 -112 16 -144
WIRE -16 -112 -32 -128
WIRE -64 -96 -32 -128
WIRE -288 -48 -288 -80
WIRE -288 -48 -432 -48
WIRE 144 -48 144 -112
WIRE 384 -48 384 -224
WIRE 384 -48 144 -48
WIRE 464 -48 464 -208
WIRE 464 -48 384 -48
WIRE 1200 -48 464 -48
FLAG -432 -320 LASER
IOPIN -432 -320 In
FLAG 1200 -400 POPT
IOPIN 1200 -400 Out
FLAG 1200 -336 MON
IOPIN 1200 -336 Out
FLAG -432 -48 GNDL
IOPIN -432 -48 BiDir
FLAG 1200 -48 GNDM
IOPIN 1200 -48 BiDir
SYMBOL diode -304 -256 R0
SYMATTR InstName D1
SYMATTR Value DLASER_GENERIC
SYMBOL g2 464 -192 M180
SYMATTR InstName G1
SYMATTR Value {TYP_MONITOR_CUR/TYP_OPTICAL_PWR}
SYMBOL voltage -288 -176 R0
WINDOW 123 0 0 Left 0
WINDOW 39 0 0 Left 0
SYMATTR InstName VIDIODE
SYMATTR Value 0
SYMBOL bv 144 -208 R0
SYMATTR InstName B1
SYMATTR Value V={IF(I(VIDIODE) - ITHRES + 0.5, SLOPE_EFF*I(VIDIODE)-SLOPE_EFF*ITHRES, 0)}
TEXT -280 80 Left 2 !.MODEL DLASER_GENERIC D(\n+ IS=10n         ; Reverse saturation current\n+ RS=5           ; Series resistance\n+ N=1            ; Emission coefficient (ideal diode factor)\n+ BV=5           ; Reverse breakdown voltage\n+ IBV=10u        ; Current at reverse breakdown voltage\n+ CJO=3p         ; Zero-bias junction capacitance\n+ M=0.5          ; Junction grading coefficient\n+ VJ=1.7         ; Built-in potential\n+ FC=0.5         ; Forward bias depletion capacitance coefficient\n+ TT=10n         ; Transit time (affects reverse recovery))
TEXT -280 40 Left 2 !.param TYP_OPTICAL_PWR=10e-3 TYP_MONITOR_CUR=50e-6 SLOPE_EFF=0.8 ITHRES=15e-3
TEXT -280 416 Left 2 !.MODEL DPHOTO_GENERIC D(\n+ IS=10n         ; Reverse saturation current\n+ RS=5           ; Series resistance\n+ N=1            ; Emission coefficient (ideal diode factor)\n+ BV=5           ; Reverse breakdown voltage\n+ IBV=10u        ; Current at reverse breakdown voltage\n+ CJO=3p         ; Zero-bias junction capacitance\n+ M=0.5          ; Junction grading coefficient\n+ VJ=1.7         ; Built-in potential\n+ FC=0.5         ; Forward bias depletion capacitance coefficient\n+ TT=10n         ; Transit time (affects reverse recovery))
TEXT 712 80 Left 2 !.model Didl D(Ron=0.0001 Roff=100G Vfwd=0)