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*****************************************************************
* *
* GaN Systems Inc. Power Transistors *
* PSpice Library for GaN Transistors *
* Version 4.1 *
* *
*****************************************************************
*****************************************************************
* *
* Models provided by GaN Systems Inc. are not warranted by *
* GaN Systems Inc. as *
* fully representing all of the specifications and operating *
* characteristics of the semiconductor product to which the *
* model relates. The model describe the characteristics of a *
* typical device. *
* In all cases, the current data sheet information for a given *
* device is the final design guideline and the only actual *
* performance specification. *
* Altough models can be a useful tool in evaluating device *
* performance, they cannot model exact device performance under *
* all conditions, nor are they intended to replace bread- *
* boarding for final verification. GaN Systems Inc. therefore *
* does not assume any liability arising from their use. *
* GaN Systems Inc. reserves the right to change models without *
* prior notice. *
* *
* This library contains models of the following GaN Systems *
* Inc. transistors: *
* *
* GS61008P *
*****************************************************************
*Level 1. Optimized for simulation speed
*$
*$
.subckt GaN_PSpice_GS61008P_L1V4P1 gatein drainin sourcein source_S
*
*
.param rTC=-0.004 gan_res={3.38e-03} metal_res={2.0e-3} gtc=3.275 sh_s=0.239 sh_d=0.761
.param cur=0.089 x0_0=1.1 x0_1=1.1 x0_2=1.0 thr=1.8 itc=0.83 atc=180.15
*
*
rd drainin drain { sh_d* (metal_res/2.0*(1-1*rTc*(Temp-25)) + gan_res*PWR((Temp+273)/298,gtc)) }
rs sourcein source { sh_s * (metal_res/2.0*(1-1*rTc*(Temp-25)) + gan_res*PWR((Temp+273)/298,gtc)) }
RSS source_S source {0.001}
rg gatein gate {1.5}
*
*
Rcsdconv drain source {4000Meg}
Rcgsconv gate source {4000Meg}
Rcgdconv gate drain {4000Meg}
*
*
gswitch drain2 source2 value { (if(v(drain2,source2)>0,
+ (cur*(-(Temp-25)*itc+atc)*log(1.0+exp(26*(v(gate,source2)-thr)))*
+ v(drain2,source2)/(1 + max(x0_0+x0_1*(v(gate,source2)+x0_2),0.2)*v(drain2,source2))),
+ (-cur*(-(Temp-25)*itc+atc)*log(1.0+exp(26*(v(gate,drain2)-thr)))*
+ v(source2, drain2)/(1 + max(x0_0+x0_1*(v(gate,drain2)+x0_2),0.2)*v(source2,drain2))))) }
*
*
R_drain2 drain2 drain {(1e-7)}
R_source2 source2 source {(1e-7)}
*
*
*
C_GS1 gate source {6.04e-10}
E_IS1 tl_gs1 bl_gs1 Value = { ( - 14.08e-11*(1-1./(1+exp(0.32*(-v(drain, source)+8.0))))
+ - 1.653e-11*(1-1./(1+exp(0.029*(-v(drain, source)+80.0))))
+ - 1.5e-10*(-1+1./(1+exp(0.16*(-v(drain, source)-2.1)))) )*v(gate,source) }
V_INGS1 br_gs1 bl_gs1 {0.0}
C_IGS1 br_gs1 tr_gs1 {1.0e-6}
R_IGS1 tr_gs1 tl_gs1 {1e-3}
F_IGS1 gate source V_INGS1 {1.0e6}
R_IGS12 bl_gs1 source {100Meg}
*
*
E_IGS2 tl_gs2 bl_gs2 Value = { ( 1.0e-010*log(1+exp(6.1*(v(gate,source)-2.2)))) }
V_INGS2 br_gs2 bl_gs2 {0.0}
C_IGS2 br_gs2 tr_gs2 {1.0e-6}
R_IGS2 tr_gs2 tl_gs2 {1e-3}
F_IGS2 gate source V_INGS2 {1.0e6}
R_IGS22 bl_gs2 source {100Meg}
*
*
C_GD gate drain {0.6e-012}
E_IGD tl_gd bl_gd Value = { (44e-11*log(1+exp(0.32*(v(gate, drain)+8)))
+ + 57e-11*log(1+exp(0.029*(v(gate, drain)+80))) ) }
V_INGD br_gd bl_gd {0.0}
C_IGD br_gd tr_gd {1.0e-6}
R_IGD tr_gd tl_gd {1e-3}
F_IGD gate drain V_INGD {1.0e6}
R_IGD2 bl_gd drain {100Meg}
*
*
C_SD source drain {2.18e-010}
E_ISD tl_sd bl_sd Value = { (44e-11*log(1+exp(0.32*(v(source2,drain2)+8)))
+ + 57e-11*log(1+exp(0.029*(v(source2,drain2)+80)))
+ + 1.95e-10*log(1+exp(1.19*(v(source2,drain2)+16)))
+ + 1.69e-9*log(1+exp(0.07*(v(source2,drain2)+31))) ) }
V_INSD br_sd bl_sd {0.0}
C_ISD br_sd tr_sd {1.0e-6}
R_ISD tr_sd tl_sd {1e-3}
F_ISD source2 drain2 V_INSD {1.0e6}
R_ISD2 bl_sd drain2 {100Meg}
*
*
.ends
*$
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