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florent_ba |
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Version 4
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SHEET 1 1412 712
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WIRE 1200 -400 144 -400
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WIRE 1200 -336 464 -336
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WIRE -288 -320 -432 -320
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WIRE 464 -288 464 -336
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WIRE 144 -272 144 -400
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WIRE 416 -272 144 -272
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WIRE -288 -256 -288 -320
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WIRE 416 -224 384 -224
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WIRE 16 -192 0 -192
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WIRE 144 -192 144 -272
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WIRE 16 -176 0 -192
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WIRE 16 -176 16 -192
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WIRE -288 -160 -288 -192
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WIRE -16 -160 16 -192
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WIRE -16 -160 -32 -176
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WIRE -64 -144 -32 -176
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WIRE 16 -144 0 -144
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WIRE 16 -128 0 -144
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WIRE 16 -128 16 -144
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WIRE -16 -112 16 -144
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WIRE -16 -112 -32 -128
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WIRE -64 -96 -32 -128
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WIRE -288 -48 -288 -80
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WIRE -288 -48 -432 -48
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WIRE 144 -48 144 -112
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WIRE 384 -48 384 -224
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WIRE 384 -48 144 -48
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WIRE 464 -48 464 -208
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WIRE 464 -48 384 -48
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WIRE 1200 -48 464 -48
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FLAG -432 -320 LASER
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IOPIN -432 -320 In
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FLAG 1200 -400 POPT
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IOPIN 1200 -400 Out
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FLAG 1200 -336 MON
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IOPIN 1200 -336 Out
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FLAG -432 -48 GNDL
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IOPIN -432 -48 BiDir
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FLAG 1200 -48 GNDM
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IOPIN 1200 -48 BiDir
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SYMBOL diode -304 -256 R0
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SYMATTR InstName D1
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SYMATTR Value DLASER_GENERIC
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SYMBOL g2 464 -192 M180
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SYMATTR InstName G1
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SYMATTR Value {TYP_MONITOR_CUR/TYP_OPTICAL_PWR}
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SYMBOL voltage -288 -176 R0
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WINDOW 123 0 0 Left 0
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WINDOW 39 0 0 Left 0
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SYMATTR InstName VIDIODE
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SYMATTR Value 0
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SYMBOL bv 144 -208 R0
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SYMATTR InstName B1
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SYMATTR Value V={IF(I(VIDIODE) - ITHRES + 0.5, SLOPE_EFF*I(VIDIODE)-SLOPE_EFF*ITHRES, 0)}
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TEXT -280 80 Left 2 !.MODEL DLASER_GENERIC D(\n+ IS=10n ; Reverse saturation current\n+ RS=5 ; Series resistance\n+ N=1 ; Emission coefficient (ideal diode factor)\n+ BV=5 ; Reverse breakdown voltage\n+ IBV=10u ; Current at reverse breakdown voltage\n+ CJO=3p ; Zero-bias junction capacitance\n+ M=0.5 ; Junction grading coefficient\n+ VJ=1.7 ; Built-in potential\n+ FC=0.5 ; Forward bias depletion capacitance coefficient\n+ TT=10n ; Transit time (affects reverse recovery))
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TEXT -280 40 Left 2 !.param TYP_OPTICAL_PWR=10e-3 TYP_MONITOR_CUR=50e-6 SLOPE_EFF=0.8 ITHRES=15e-3
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TEXT -280 416 Left 2 !.MODEL DPHOTO_GENERIC D(\n+ IS=10n ; Reverse saturation current\n+ RS=5 ; Series resistance\n+ N=1 ; Emission coefficient (ideal diode factor)\n+ BV=5 ; Reverse breakdown voltage\n+ IBV=10u ; Current at reverse breakdown voltage\n+ CJO=3p ; Zero-bias junction capacitance\n+ M=0.5 ; Junction grading coefficient\n+ VJ=1.7 ; Built-in potential\n+ FC=0.5 ; Forward bias depletion capacitance coefficient\n+ TT=10n ; Transit time (affects reverse recovery))
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TEXT 712 80 Left 2 !.model Didl D(Ron=0.0001 Roff=100G Vfwd=0)
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