Subversion Repositories Electronics.Rangefider

*$

* UCC27511

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*  (C) Copyright 2015 Texas Instruments Incorporated. All rights reserved.

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** This model is designed as an aid for customers of Texas Instruments.

** TI and its licensors and suppliers make no warrenties, either expressed

** or implied, with respect to this model, including the warranties of 

** merchantability or fitness for a particular purpose.  The model is

** provided solely on an "as is" basis.  The entire risk as to its quality

** and performance is with the customer.

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*

** Released by: WEBENCH Design Center, Texas Instruments Inc.

* Part: UCC27511

* Date: 15SEP2015

* Model Type: TRANSIENT

* Simulator: PSPICE

* Simulator Version: 16.2.0.p001

* EVM Order Number: NA

* EVM Users Guide: NA

* Datasheet: SLUSAW9E–FEBRUARY 2012–REVISED DECEMBER 2013

*

* Model Version: Final 1.10

*

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*

* Updates:

*

* Final 1.10

*< Made this change to the model >

*       1. Improved output rise & fall times vs Supply Voltage as per datasheet Figure 17 & 18

*		2. Improved Propagation delays vs Supply Voltage as per datasheet Figure 16

*

* Final 1.00

* Release to Web

*

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.SUBCKT UCC27511_TRANS IN+ IN- GND VDD OUTH OUTL

R_U1_R1         VDD IN-  200k  

R_U1_R2         IN+ GND  230k  

X_U1_U4         U1_UVLO_VDD U1_INP_NEG U1_INP_POS ON_INT AND3

V_U1_V1         U1_N231824 GND 4.2Vdc

X_U1_U3         U1_INP_POS IN+ U1_N231812 COMP PARAMS: VHYS=1.0

X_U1_U6         U1_UVLO_VDD VDD U1_N231824 COMP PARAMS: VHYS=0.3

X_U1_U7         U1_INP_NEG IN- U1_N231828 COMP_INV PARAMS: VHYS=1.0

V_U1_V2         U1_N231828 GND 2.2Vdc

V_U1_V3         U1_N231812 GND 2.2Vdc

V_U3_V5         U3_N14683173 0 1Vdc

X_U3_U43         U3_N14683247 DRV_G BUF_BASIC_GEN PARAMS: VDD=1 VSS=0

+  VTHRESH=0.5

E_U3_ABM4         U3_N14683241 0 VALUE { IF(V(ON_INT) >=0.5, V(VDD),0)    }

X_U3_U44         ON_INT DRV_G U3_N14683147 AND2_BASIC_GEN PARAMS: VDD=1 VSS=0

+  VTHRESH=500E-3

V_U3_V4         U3_N14683887 0 1Vdc

G_U3_G1         U3_N14683173 U3_N14683247 TABLE { V(U3_N14683221, 0) } 

+ ( (0,0)(4.5,48m)(5,52m)6,58m)(8,63m)(10,68m)(12,75m)(18,100m) )

X_U3_U48         0 U3_N14683247 d_d1 PARAMS:

X_U3_U47         U3_N14683247 U3_N14683173 d_d1 PARAMS:

C_U3_C3         0 U3_N14683221  1n  

X_U3_U46         DRV_G ON_INT U3_N14683159 NOR2_BASIC_GEN PARAMS: VDD=1 VSS=0

+  VTHRESH=500E-3

R_U3_R3         U3_N14683301 U3_N14683281  1 TC=0,0 

X_U3_S2    U3_N14683147 0 U3_N14683887 U3_N14683247 TON_TOFF_U3_S2 

G_U3_G2         U3_N14683247 0 TABLE { V(U3_N14683281, 0) } 

+ ( (0,0)(4.5,43m)(5,45m)(6,52m)(8,58m)(10,60m)(12,70m)(18,70m) )

C_U3_C4         0 U3_N14683281  1n  

C_U3_C1         U3_N14683247 0  1n IC=0 

E_U3_ABM5         U3_N14683301 0 VALUE { IF(V(ON_INT) <0.5, V(VDD),0)    }

X_U3_S1    U3_N14683159 0 U3_N14683247 0 TON_TOFF_U3_S1 

R_U3_R2         U3_N14683241 U3_N14683221  1 TC=0,0 

C_U2_C1         U2_N224945 U2_N224973  5p  

C_U2_C6         OUTL U2_N224969  10p  

C_U2_C2         U2_N225185 U2_N224969  5p  

X_U2_U8         U2_N225185 GND U2_N16767794 0 RVAR PARAMS:  RREF=1

C_U2_C3         OUTH U2_N224945  10p  

R_U2_R1         U2_N224941 U2_N224945  20  

E_U2_E4         U2_N16766739 0 TABLE { V(VDD, 0) } 

+ ( (4.5,3.8) (6.5,2.115)(10,1.18)(12,1.09) (16,0.78)(18, 0.67)  )

R_U2_R2         U2_N224965 U2_N224969  20  

C_U2_C5         OUTH VDD  10pF  

C_U2_C4         GND OUTL  10pF  

X_U2_U7         VDD U2_N224973 U2_N16766739 0 RVAR PARAMS:  RREF=1

E_U2_E1         U2_N224941 OUTH VALUE { IF(V(DRV_G, 0) > 0.5, 5, -5) }

E_U2_E3         U2_N16767794 0 TABLE { V(VDD, 0) } 

+ ( (4.5,1.05) (6.5,1.03)(10,1.05)(12,1.11) (16,1.35)(18,1.42)  )

M_U2_M1         U2_N224973 U2_N224945 OUTH OUTH NMOS01           

E_U2_E2         OUTL U2_N224965 VALUE { IF(V(DRV_G, 0) > 0.5, -5, 5) }

M_U2_M2         U2_N225185 U2_N224969 OUTL OUTL PMOS02       

.ENDS UCC27511_TRANS

*$

.SUBCKT TON_TOFF_U3_S2 1 2 3 4  

S_U3_S2         3 4 1 2 _U3_S2

RS_U3_S2         1 2 1G

.MODEL         _U3_S2 VSWITCH Roff=100e6 Ron=1m Voff=0.2 Von=0.8

.ENDS TON_TOFF_U3_S2

*$

.SUBCKT TON_TOFF_U3_S1 1 2 3 4  

S_U3_S1         3 4 1 2 _U3_S1

RS_U3_S1         1 2 1G

.MODEL         _U3_S1 VSWITCH Roff=100e6 Ron=1m Voff=0.2 Von=0.8

.ENDS TON_TOFF_U3_S1

*$

.MODEL NMOS01 NMOS

+ VTO     = 2

+ KP      = 0.889

+ LAMBDA  = 0.001

*$

.MODEL PMOS01 PMOS

+ VTO = -2

+ KP = 0.889

+ LAMBDA = 0.001

*$

.MODEL PMOS02 PMOS

+ VTO     = -2

+ KP      = 1.778

+ LAMBDA  = 0.001

*$

.SUBCKT COMP VOUT VINP VINN PARAMS: VHYS = 0.05 

E1 YINT 0 VALUE {IF(V(VINP) + V(VOUT)*VHYS > V(VINN), 1, 0)}

R1 YINT VOUT 1

C1 VOUT 0 1n

.ENDS COMP

*$

.SUBCKT COMP_INV VOUT VINP VINN PARAMS: VHYS = 0.05 

E1 YINT 0 VALUE {IF(V(VINP) + (1 - V(VOUT))*VHYS > V(VINN), 0, 1)}

R1 YINT VOUT 1

C1 VOUT 0 1n

.ENDS COMP_INV

*$

.SUBCKT AND3 A B C Y

E1 YINT 0 VALUE {

+ IF(V(A) > 0.5  &  

+ V(B) > 0.5 &

+ V(C) > 0.5, 1, 0)}

R1 YINT Y 1

C1 Y 0 1n

.ENDS AND3 

*$

.SUBCKT POWERMOS G D S PARAMS: RDSON=16m Ciss=1375p Crss=70p Coss=340p VSP=3.5 RG=1

* This is a simple model for Power MOSFET.

* The parameters modeled are

* - RDSon,

* - Input Capacitance,

* - Reverse capacitance,

* - Output capacitance,

* - Switching point voltage (Gate voltage where the FET starts switching),

* - Gate Resistance

C_C1         S Da  {Coss} IC=0

R_R1         Da D  10

C_C2         Ga D  {Crss}  IC=0

R_R2         G Ga {RG}

C_C3         Ga S  {Ciss} IC=0

D_D1         S Db Dbreak

R_R3         Db D 1m

S_switchM         D S Ga S _switchM

RS_switchM         Ga S 100Meg

.MODEL         _switchM VSWITCH Roff=100e6 Ron={RDSON} Voff=1.1 Von={VSP}

.model Dbreak D Is=1e-14 Cjo=.1pF Rs=.01

.ENDS POWERMOS

*$

.MODEL DIODE D

+ RS=.5

+ CJO=100.00E-15

+ M=.3333

+ VJ=.75

+ ISR=100.00E-12

+ BV=100

+ IBV=100.00E-6

+ TT=5.0000E-9

*$

.SUBCKT BUF_BASIC_GEN A  Y PARAMS: VDD=1 VSS=0 VTHRESH=0.5 

E_ABMGATE    YINT 0 VALUE {{IF(V(A) > {VTHRESH} , 

+ {VDD},{VSS})}}

RINT YINT Y 1

CINT Y 0 1n

.ENDS BUF_BASIC_GEN

*$

.SUBCKT AND2_BASIC_GEN A B Y PARAMS: VDD=1 VSS=0 VTHRESH=0.5 

E_ABMGATE    YINT 0 VALUE {{IF(V(A) > {VTHRESH}  &  

+ V(B) > {VTHRESH},{VDD},{VSS})}}

RINT YINT Y 1

CINT Y 0 1n

.ENDS AND2_BASIC_GEN

*$

.SUBCKT COMP_BASIC_GEN INP INM Y PARAMS: VDD=1 VSS=0 VTHRESH=0.5	

E_ABM Yint 0 VALUE {IF (V(INP) > 

+ V(INM), {VDD},{VSS})}

R1 Yint Y 1

C1 Y 0 1n

.ENDS COMP_BASIC_GEN

*$

.SUBCKT RVAR 101 102 201 202 PARAMS: RREF=1

* nodes : 101 102 : nodes between which variable resistance is placed

* 201 202 : nodes to whose voltage the resistance is proportional

* parameters : rref : reference value of the resistance

rin 201 202 1G; input resistance

r 301 0 {rref}

fcopy 0 301 vsense 1; copy output current thru Z

eout 101 106 poly(2) 201 202 301 0 0 0 0 0 1; multiply VoverZ with Vctrl

vsense 106 102 0; sense iout

.ENDS RVAR

*$

.SUBCKT D_D1 1 2

D1 1 2 DD1

.MODEL DD1 D( IS=1e-15 TT=10p Rs=0.05 N=.1  )

.ENDS D_D1

*$

.SUBCKT NOR2_BASIC_GEN A B Y PARAMS: VDD=1 VSS=0 VTHRESH=0.5 

E_ABMGATE    YINT 0 VALUE {{IF(V(A) > {VTHRESH}  |  

+ V(B) > {VTHRESH},{VSS},{VDD})}}

RINT YINT Y 1

CINT Y 0 1n

.ENDS NOR2_BASIC_GEN

*$