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*$
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* UCC27511
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*****************************************************************************
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*  (C) Copyright 2015 Texas Instruments Incorporated. All rights reserved.
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*****************************************************************************
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** This model is designed as an aid for customers of Texas Instruments.
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** TI and its licensors and suppliers make no warrenties, either expressed
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** or implied, with respect to this model, including the warranties of 
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** merchantability or fitness for a particular purpose.  The model is
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** provided solely on an "as is" basis.  The entire risk as to its quality
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** and performance is with the customer.
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*****************************************************************************
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*
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** Released by: WEBENCH Design Center, Texas Instruments Inc.
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* Part: UCC27511
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* Date: 15SEP2015
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* Model Type: TRANSIENT
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* Simulator: PSPICE
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* Simulator Version: 16.2.0.p001
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* EVM Order Number: NA
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* EVM Users Guide: NA
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* Datasheet: SLUSAW9E–FEBRUARY 2012–REVISED DECEMBER 2013
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*
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* Model Version: Final 1.10
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*
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*****************************************************************************
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*
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* Updates:
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*
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* Final 1.10
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*< Made this change to the model >
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*       1. Improved output rise & fall times vs Supply Voltage as per datasheet Figure 17 & 18
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*		2. Improved Propagation delays vs Supply Voltage as per datasheet Figure 16
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*
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* Final 1.00
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* Release to Web
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*
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*****************************************************************************
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.SUBCKT UCC27511_TRANS IN+ IN- GND VDD OUTH OUTL
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R_U1_R1         VDD IN-  200k  
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R_U1_R2         IN+ GND  230k  
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X_U1_U4         U1_UVLO_VDD U1_INP_NEG U1_INP_POS ON_INT AND3
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V_U1_V1         U1_N231824 GND 4.2Vdc
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X_U1_U3         U1_INP_POS IN+ U1_N231812 COMP PARAMS: VHYS=1.0
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X_U1_U6         U1_UVLO_VDD VDD U1_N231824 COMP PARAMS: VHYS=0.3
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X_U1_U7         U1_INP_NEG IN- U1_N231828 COMP_INV PARAMS: VHYS=1.0
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V_U1_V2         U1_N231828 GND 2.2Vdc
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V_U1_V3         U1_N231812 GND 2.2Vdc
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V_U3_V5         U3_N14683173 0 1Vdc
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X_U3_U43         U3_N14683247 DRV_G BUF_BASIC_GEN PARAMS: VDD=1 VSS=0
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+  VTHRESH=0.5
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E_U3_ABM4         U3_N14683241 0 VALUE { IF(V(ON_INT) >=0.5, V(VDD),0)    }
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X_U3_U44         ON_INT DRV_G U3_N14683147 AND2_BASIC_GEN PARAMS: VDD=1 VSS=0
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+  VTHRESH=500E-3
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V_U3_V4         U3_N14683887 0 1Vdc
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G_U3_G1         U3_N14683173 U3_N14683247 TABLE { V(U3_N14683221, 0) } 
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+ ( (0,0)(4.5,48m)(5,52m)6,58m)(8,63m)(10,68m)(12,75m)(18,100m) )
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X_U3_U48         0 U3_N14683247 d_d1 PARAMS:
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X_U3_U47         U3_N14683247 U3_N14683173 d_d1 PARAMS:
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C_U3_C3         0 U3_N14683221  1n  
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X_U3_U46         DRV_G ON_INT U3_N14683159 NOR2_BASIC_GEN PARAMS: VDD=1 VSS=0
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+  VTHRESH=500E-3
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R_U3_R3         U3_N14683301 U3_N14683281  1 TC=0,0 
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X_U3_S2    U3_N14683147 0 U3_N14683887 U3_N14683247 TON_TOFF_U3_S2 
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G_U3_G2         U3_N14683247 0 TABLE { V(U3_N14683281, 0) } 
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+ ( (0,0)(4.5,43m)(5,45m)(6,52m)(8,58m)(10,60m)(12,70m)(18,70m) )
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C_U3_C4         0 U3_N14683281  1n  
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C_U3_C1         U3_N14683247 0  1n IC=0 
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E_U3_ABM5         U3_N14683301 0 VALUE { IF(V(ON_INT) <0.5, V(VDD),0)    }
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X_U3_S1    U3_N14683159 0 U3_N14683247 0 TON_TOFF_U3_S1 
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R_U3_R2         U3_N14683241 U3_N14683221  1 TC=0,0 
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C_U2_C1         U2_N224945 U2_N224973  5p  
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C_U2_C6         OUTL U2_N224969  10p  
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C_U2_C2         U2_N225185 U2_N224969  5p  
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X_U2_U8         U2_N225185 GND U2_N16767794 0 RVAR PARAMS:  RREF=1
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C_U2_C3         OUTH U2_N224945  10p  
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R_U2_R1         U2_N224941 U2_N224945  20  
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E_U2_E4         U2_N16766739 0 TABLE { V(VDD, 0) } 
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+ ( (4.5,3.8) (6.5,2.115)(10,1.18)(12,1.09) (16,0.78)(18, 0.67)  )
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R_U2_R2         U2_N224965 U2_N224969  20  
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C_U2_C5         OUTH VDD  10pF  
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C_U2_C4         GND OUTL  10pF  
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X_U2_U7         VDD U2_N224973 U2_N16766739 0 RVAR PARAMS:  RREF=1
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E_U2_E1         U2_N224941 OUTH VALUE { IF(V(DRV_G, 0) > 0.5, 5, -5) }
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E_U2_E3         U2_N16767794 0 TABLE { V(VDD, 0) } 
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+ ( (4.5,1.05) (6.5,1.03)(10,1.05)(12,1.11) (16,1.35)(18,1.42)  )
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M_U2_M1         U2_N224973 U2_N224945 OUTH OUTH NMOS01           
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E_U2_E2         OUTL U2_N224965 VALUE { IF(V(DRV_G, 0) > 0.5, -5, 5) }
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M_U2_M2         U2_N225185 U2_N224969 OUTL OUTL PMOS02       
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.ENDS UCC27511_TRANS
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*$
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.SUBCKT TON_TOFF_U3_S2 1 2 3 4  
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S_U3_S2         3 4 1 2 _U3_S2
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RS_U3_S2         1 2 1G
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.MODEL         _U3_S2 VSWITCH Roff=100e6 Ron=1m Voff=0.2 Von=0.8
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.ENDS TON_TOFF_U3_S2
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*$
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.SUBCKT TON_TOFF_U3_S1 1 2 3 4  
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S_U3_S1         3 4 1 2 _U3_S1
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RS_U3_S1         1 2 1G
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.MODEL         _U3_S1 VSWITCH Roff=100e6 Ron=1m Voff=0.2 Von=0.8
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.ENDS TON_TOFF_U3_S1
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*$
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.MODEL NMOS01 NMOS
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+ VTO     = 2
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+ KP      = 0.889
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+ LAMBDA  = 0.001
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*$
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.MODEL PMOS01 PMOS
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+ VTO = -2
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+ KP = 0.889
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+ LAMBDA = 0.001
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*$
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.MODEL PMOS02 PMOS
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+ VTO     = -2
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+ KP      = 1.778
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+ LAMBDA  = 0.001
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*$
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.SUBCKT COMP VOUT VINP VINN PARAMS: VHYS = 0.05 
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E1 YINT 0 VALUE {IF(V(VINP) + V(VOUT)*VHYS > V(VINN), 1, 0)}
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R1 YINT VOUT 1
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C1 VOUT 0 1n
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.ENDS COMP
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*$
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.SUBCKT COMP_INV VOUT VINP VINN PARAMS: VHYS = 0.05 
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E1 YINT 0 VALUE {IF(V(VINP) + (1 - V(VOUT))*VHYS > V(VINN), 0, 1)}
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R1 YINT VOUT 1
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C1 VOUT 0 1n
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.ENDS COMP_INV
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*$
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.SUBCKT AND3 A B C Y
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E1 YINT 0 VALUE {
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+ IF(V(A) > 0.5  &  
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+ V(B) > 0.5 &
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+ V(C) > 0.5, 1, 0)}
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R1 YINT Y 1
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C1 Y 0 1n
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.ENDS AND3 
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*$
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.SUBCKT POWERMOS G D S PARAMS: RDSON=16m Ciss=1375p Crss=70p Coss=340p VSP=3.5 RG=1
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* This is a simple model for Power MOSFET.
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* The parameters modeled are
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* - RDSon,
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* - Input Capacitance,
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* - Reverse capacitance,
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* - Output capacitance,
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* - Switching point voltage (Gate voltage where the FET starts switching),
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* - Gate Resistance
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C_C1         S Da  {Coss} IC=0
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R_R1         Da D  10
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C_C2         Ga D  {Crss}  IC=0
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R_R2         G Ga {RG}
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C_C3         Ga S  {Ciss} IC=0
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D_D1         S Db Dbreak
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R_R3         Db D 1m
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S_switchM         D S Ga S _switchM
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RS_switchM         Ga S 100Meg
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.MODEL         _switchM VSWITCH Roff=100e6 Ron={RDSON} Voff=1.1 Von={VSP}
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.model Dbreak D Is=1e-14 Cjo=.1pF Rs=.01
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.ENDS POWERMOS
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*$
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.MODEL DIODE D
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+ RS=.5
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+ CJO=100.00E-15
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+ M=.3333
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+ VJ=.75
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+ ISR=100.00E-12
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+ BV=100
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+ IBV=100.00E-6
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+ TT=5.0000E-9
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*$
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.SUBCKT BUF_BASIC_GEN A  Y PARAMS: VDD=1 VSS=0 VTHRESH=0.5 
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E_ABMGATE    YINT 0 VALUE {{IF(V(A) > {VTHRESH} , 
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+ {VDD},{VSS})}}
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RINT YINT Y 1
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CINT Y 0 1n
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.ENDS BUF_BASIC_GEN
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*$
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.SUBCKT AND2_BASIC_GEN A B Y PARAMS: VDD=1 VSS=0 VTHRESH=0.5 
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E_ABMGATE    YINT 0 VALUE {{IF(V(A) > {VTHRESH}  &  
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+ V(B) > {VTHRESH},{VDD},{VSS})}}
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RINT YINT Y 1
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CINT Y 0 1n
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.ENDS AND2_BASIC_GEN
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*$
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.SUBCKT COMP_BASIC_GEN INP INM Y PARAMS: VDD=1 VSS=0 VTHRESH=0.5	
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E_ABM Yint 0 VALUE {IF (V(INP) > 
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+ V(INM), {VDD},{VSS})}
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R1 Yint Y 1
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C1 Y 0 1n
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.ENDS COMP_BASIC_GEN
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*$
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.SUBCKT RVAR 101 102 201 202 PARAMS: RREF=1
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* nodes : 101 102 : nodes between which variable resistance is placed
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* 201 202 : nodes to whose voltage the resistance is proportional
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* parameters : rref : reference value of the resistance
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rin 201 202 1G; input resistance
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r 301 0 {rref}
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fcopy 0 301 vsense 1; copy output current thru Z
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eout 101 106 poly(2) 201 202 301 0 0 0 0 0 1; multiply VoverZ with Vctrl
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vsense 106 102 0; sense iout
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.ENDS RVAR
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*$
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.SUBCKT D_D1 1 2
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D1 1 2 DD1
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.MODEL DD1 D( IS=1e-15 TT=10p Rs=0.05 N=.1  )
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.ENDS D_D1
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*$
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.SUBCKT NOR2_BASIC_GEN A B Y PARAMS: VDD=1 VSS=0 VTHRESH=0.5 
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E_ABMGATE    YINT 0 VALUE {{IF(V(A) > {VTHRESH}  |  
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+ V(B) > {VTHRESH},{VSS},{VDD})}}
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RINT YINT Y 1
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CINT Y 0 1n
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.ENDS NOR2_BASIC_GEN
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*$