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Rev Author Line No. Line
1 florent_ba 1
*Oct 3, 2005
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*Doc. ID: 77873, S-52018, Rev. A
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*File Name: Si5517DU_PS.txt and Si5517DU_PS.lib
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			   *Dn Gn Sn Dp Gp Sp
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.SUBCKT Si5517DU 6 2 1 3 5 4
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X1 6 2 1 Si5517N
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X2 3 5 4 Si5517P
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.ENDS Si5517DU
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*N-CH
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.SUBCKT Si5517N 4 1 2
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M1  3 1 2 2 NMOS W=485249u L=0.25u
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M2  2 1 2 4 PMOS W=485249u L=0.23u
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R1  4 3     RTEMP 16E-3
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CGS 1 2     400E-12
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DBD 2 4     DBD
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****************************************************************
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.MODEL  NMOS       NMOS ( LEVEL  = 3            TOX    = 1.7E-8
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+ RS     = 11E-3          RD     = 0            NSUB   = 2.3E17
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+ KP     = 2.6E-5         UO     = 650
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+ VMAX   = 0              XJ     = 5E-7         KAPPA  = 5E-2
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+ ETA    = 1E-4           TPG    = 1
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+ IS     = 0              LD     = 0
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+ CGSO   = 0              CGDO   = 0            CGBO   = 0
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+ NFS    = 0.8E12         DELTA  = 0.1)
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****************************************************************
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.MODEL  PMOS       PMOS ( LEVEL  = 3            TOX    = 1.7E-8
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+NSUB    = 4E17           TPG    = -1)
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****************************************************************
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.MODEL DBD D (CJO=70E-12 VJ=0.38 M=0.22
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+RS=0.1 FC=0.5 IS=1E-12 TT=5E-8 N=1 BV=20.2)
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****************************************************************
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.MODEL RTEMP RES (TC1=5E-3 TC2=5.5E-6)
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****************************************************************
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.ENDS Si5517N
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*P-CH
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.SUBCKT Si5517P 4 1 2
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M1  3 1 2 2 PMOS W=399031u L=0.50u
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M2  2 1 2 4 NMOS W=399031u L=0.50u
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R1  4 3     RTEMP 30E-3
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CGS 1 2     120E-12
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DBD 4 2     DBD
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****************************************************************
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.MODEL  PMOS         PMOS (LEVEL  = 3           TOX    = 1.7E-8
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+ RS     = 20E-3           RD     = 0           NSUB   = 5E15
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+ KP     = 2.7E-5          UO     = 400
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+ VMAX   = 0               XJ     = 5E-7        KAPPA  = 3E-3
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+ ETA    = 1E-4            TPG    = -1
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+ IS     = 0               LD     = 0
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+ CGSO   = 0               CGDO   = 0           CGBO   = 0
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+ NFS    = 0.8E12          DELTA  = 0.1)
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*****************************************************************
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.MODEL  NMOS         NMOS (LEVEL  = 3           TOX    = 1.7E-8
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+NSUB    = 1E17            TPG    = -1)
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*****************************************************************
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.MODEL DBD D (CJO=80E-12 VJ=0.38 M=0.17
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+RS=0.1 FC=0.5 IS=1E-12 TT=6.7E-8 N=1 BV=20.5)
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*****************************************************************
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.MODEL RTEMP RES (TC1=5E-3 TC2=5.5E-6)
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*****************************************************************
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.ENDS Si5517P