1 |
florent_ba |
1 |
* Created in LTspice Version XVII *
|
|
|
2 |
* *
|
|
|
3 |
* GaN Systems Inc. Power Transistors *
|
|
|
4 |
* LTSpice Library for GaN Transistors *
|
|
|
5 |
* Version 4.1 *
|
|
|
6 |
* *
|
|
|
7 |
*****************************************************************
|
|
|
8 |
*****************************************************************
|
|
|
9 |
* *
|
|
|
10 |
* Models provided by GaN Systems Inc. are not warranted by *
|
|
|
11 |
* GaN Systems Inc. as *
|
|
|
12 |
* fully representing all of the specifications and operating *
|
|
|
13 |
* characteristics of the semiconductor product to which the *
|
|
|
14 |
* model relates. The model describe the characteristics of a *
|
|
|
15 |
* typical device. *
|
|
|
16 |
* In all cases, the current data sheet information for a given *
|
|
|
17 |
* device is the final design guideline and the only actual *
|
|
|
18 |
* performance specification. *
|
|
|
19 |
* Altough models can be a useful tool in evaluating device *
|
|
|
20 |
* performance, they cannot model exact device performance under *
|
|
|
21 |
* all conditions, nor are they intended to replace bread- *
|
|
|
22 |
* boarding for final verification. GaN Systems Inc. therefore *
|
|
|
23 |
* does not assume any liability arising from their use. *
|
|
|
24 |
* GaN Systems Inc. reserves the right to change models without *
|
|
|
25 |
* prior notice. *
|
|
|
26 |
* *
|
|
|
27 |
* This library contains models of the following GaN Systems *
|
|
|
28 |
* Inc. transistors: *
|
|
|
29 |
* *
|
|
|
30 |
* GS61008P *
|
|
|
31 |
*****************************************************************
|
|
|
32 |
*Level 3. In addition to Level 2, this level includes the stray inductance in the package.
|
|
|
33 |
*$
|
|
|
34 |
*$
|
|
|
35 |
.subckt GaN_LTspice_GS61008P_L3V4P1 gatein drainin sourcein source_S TC TJ
|
|
|
36 |
*
|
|
|
37 |
*
|
|
|
38 |
.param rTC=-0.004 gan_res={3.38e-03} metal_res={2.0e-3} gtc=3.275 sh_s=0.239 sh_d=0.761
|
|
|
39 |
.param cur=0.089 x0_0=1.1 x0_1=1.1 x0_2=1.0 thr=1.8 itc=0.83 atc=180.15
|
|
|
40 |
*
|
|
|
41 |
*
|
|
|
42 |
.param tscl = 0.5
|
|
|
43 |
Cth_1 0 TJ {(7.0e-4)*tscl}
|
|
|
44 |
Cth_2 0 T11 {(6.7e-3)*tscl}
|
|
|
45 |
Cth_3 0 T22 {(5.9e-3)*tscl}
|
|
|
46 |
Cth_4 0 T33 {(1.8e-3)*tscl}
|
|
|
47 |
*
|
|
|
48 |
*
|
|
|
49 |
Rth_1 T11 TJ {0.017}
|
|
|
50 |
Rth_2 T22 T11 {0.253}
|
|
|
51 |
Rth_3 T33 T22 {0.264}
|
|
|
52 |
Rth_4 TC T33 {0.017}
|
|
|
53 |
*
|
|
|
54 |
*
|
|
|
55 |
bdtemp 0 TJ I = (if(v(drain,source)>0,
|
|
|
56 |
+ (cur*(-(v(TJ)-25)*itc+atc)*log(1.0+exp(26*(v(gate,source)-thr)))*
|
|
|
57 |
+ v(drain,source)/(1 + max(x0_0+x0_1*(v(gate,source)+x0_2),0.2)*v(drain,source)))*
|
|
|
58 |
+ v(drain,source),
|
|
|
59 |
+ (cur*(-(v(TJ)-25)*itc+atc)*log(1.0+exp(26*(v(gate,drain)-thr)))*
|
|
|
60 |
+ v(source, drain)/(1 + max(x0_0+x0_1*(v(gate,drain)+x0_2),0.2)*v(source,drain)))*
|
|
|
61 |
+ v(drain,source)))
|
|
|
62 |
*
|
|
|
63 |
*
|
|
|
64 |
ld drainin drain3 {370e-12} Rser=0
|
|
|
65 |
ERES_d drain3 3_d value={I(VSENSE_d)*sh_d* (metal_res*(1-1*rTc*(V(TJ)-25)) + gan_res*PWR((v(TJ)+273)/298,gtc)) }
|
|
|
66 |
VSENSE_d 3_d drain DC 0
|
|
|
67 |
*
|
|
|
68 |
*
|
|
|
69 |
VSENSE_s 3_s source DC 0
|
|
|
70 |
ERES_s source3 3_s value={I(VSENSE_s)* sh_s * (metal_res*(1-1*rTc*(V(TJ)-25)) + gan_res*PWR((v(TJ)+273)/298,gtc)) }
|
|
|
71 |
Lcs source3 source3b {20e-12}
|
|
|
72 |
Ls sourcein source3b {150e-15} Rser=0
|
|
|
73 |
*
|
|
|
74 |
*
|
|
|
75 |
RSS source_S1 source3b {0.001}
|
|
|
76 |
LSS source_S source_S1 {0.2e-9} Rser=0
|
|
|
77 |
rg gatein gate1 {1.5}
|
|
|
78 |
Lg gate1 gate {3.1e-9} Rser=0
|
|
|
79 |
*
|
|
|
80 |
*
|
|
|
81 |
Rcsdconv drain source {4000Meg}
|
|
|
82 |
Rcgsconv gate source {4000Meg}
|
|
|
83 |
Rcgdconv gate drain {4000Meg}
|
|
|
84 |
*
|
|
|
85 |
*
|
|
|
86 |
bswitch drain2 source2 I = (if(v(drain2,source2)>0,
|
|
|
87 |
+ (cur*(-(v(TJ)-25)*itc+atc)*log(1.0+exp(26*(v(gate,source2)-thr)))*
|
|
|
88 |
+ v(drain2,source2)/(1 + max(x0_0+x0_1*(v(gate,source2)+x0_2),0.2)*v(drain2,source2))),
|
|
|
89 |
|
|
|
90 |
+ (-cur*(-(v(TJ)-25)*itc+atc)*log(1.0+exp(26*(v(gate,drain2)-thr)))*
|
|
|
91 |
+ v(source2, drain2)/(1 + max(x0_0+x0_1*(v(gate,drain2)+x0_2),0.2)*v(source2,drain2)))))
|
|
|
92 |
*
|
|
|
93 |
*
|
|
|
94 |
R_drain2 drain2 drain {(1e-7)}
|
|
|
95 |
R_source2 source2 source {(1e-7)}
|
|
|
96 |
*
|
|
|
97 |
*
|
|
|
98 |
*
|
|
|
99 |
C_GS gate source {6.04e-10}
|
|
|
100 |
C_GS1 gate source Q = ( - 14.08e-11*(1-1./(1+exp(0.32*(-v(drain, source)+8.0))))
|
|
|
101 |
+ - 1.653e-11*(1-1./(1+exp(0.029*(-v(drain, source)+80.0))))
|
|
|
102 |
+ - 1.5e-10*(-1+1./(1+exp(0.16*(-v(drain, source)-2.1)))) )*x
|
|
|
103 |
*
|
|
|
104 |
*
|
|
|
105 |
C_GS2 gate source Q = ( 1.0e-010*log(1+exp(6.1*(x-2.2))))
|
|
|
106 |
*
|
|
|
107 |
*
|
|
|
108 |
C_GD gate drain {0.6e-012}
|
|
|
109 |
C_GD1 gate drain Q = ( 44e-11*log(1+exp(0.32*(x+8)))+
|
|
|
110 |
+ 57e-11*log(1+exp(0.029*(x+80))) )
|
|
|
111 |
*
|
|
|
112 |
*
|
|
|
113 |
C_SD source drain {2.18e-010}
|
|
|
114 |
C_SD1 source drain Q = (
|
|
|
115 |
+ 44e-11*log(1+exp(0.32*(x+8)))+
|
|
|
116 |
+ 57e-11*log(1+exp(0.029*(x+80)))+
|
|
|
117 |
+ 1.95e-10*log(1+exp(1.19*(x+16)))+
|
|
|
118 |
+ 1.69e-9*log(1+exp(0.07*(x+31))) )
|
|
|
119 |
*
|
|
|
120 |
*
|
|
|
121 |
.ends
|
|
|
122 |
*$
|