Subversion Repositories Electronics.Rangefider

* Created in LTspice Version XVII                               *

*                                            					*

* GaN Systems Inc. Power Transistors                            *

* LTSpice Library for GaN Transistors                           *

* Version 4.1                                                   *

*                                                               *

*****************************************************************

*****************************************************************

*                                                               *

* Models provided by GaN Systems Inc. are not warranted by      *

* GaN Systems Inc. as                                           *

* fully representing all of the specifications and operating    *

* characteristics of the semiconductor product to which the     *

* model relates. The model describe the characteristics of a    *

* typical device.                                               *

* In all cases, the current data sheet information for a given  *

* device is the final design guideline and the only actual      *

* performance specification.                                    *

* Altough models can be a useful tool in evaluating device      *

* performance, they cannot model exact device performance under *

* all conditions, nor are they intended to replace bread-       *

* boarding for final verification. GaN Systems Inc. therefore   *

* does not assume any liability arising from their use.         *

* GaN Systems Inc. reserves the right to change models without  *

* prior notice.                                                 *

*                                                               *

* This library contains models of the following GaN Systems     *

* Inc. transistors:                                             *

*                                                               *

*   GS61008P                                                    *

*****************************************************************

*Level 3. In addition to Level 2, this level includes the stray inductance in the package.

*$

*$

.subckt GaN_LTspice_GS61008P_L3V4P1 gatein drainin sourcein source_S TC TJ

*

*

.param rTC=-0.004  gan_res={3.38e-03}		metal_res={2.0e-3}   gtc=3.275 sh_s=0.239   sh_d=0.761

.param  cur=0.089   x0_0=1.1	  x0_1=1.1  x0_2=1.0  thr=1.8  itc=0.83 atc=180.15

*

*

.param tscl = 0.5

Cth_1 0 TJ {(7.0e-4)*tscl}

Cth_2 0 T11  {(6.7e-3)*tscl}

Cth_3 0 T22 {(5.9e-3)*tscl}

Cth_4 0 T33 {(1.8e-3)*tscl}

*

*

Rth_1 T11 TJ {0.017}

Rth_2 T22 T11 {0.253}

Rth_3 T33 T22 {0.264}

Rth_4 TC T33 {0.017}

*

*

bdtemp 0 TJ I = (if(v(drain,source)>0,

+   (cur*(-(v(TJ)-25)*itc+atc)*log(1.0+exp(26*(v(gate,source)-thr)))*

+	v(drain,source)/(1 + max(x0_0+x0_1*(v(gate,source)+x0_2),0.2)*v(drain,source)))*

+	v(drain,source),

+   (cur*(-(v(TJ)-25)*itc+atc)*log(1.0+exp(26*(v(gate,drain)-thr)))*

+	v(source, drain)/(1 + max(x0_0+x0_1*(v(gate,drain)+x0_2),0.2)*v(source,drain)))*

+	v(drain,source)))

*

*

ld drainin drain3 {370e-12} Rser=0

ERES_d drain3 3_d value={I(VSENSE_d)*sh_d* (metal_res*(1-1*rTc*(V(TJ)-25)) + gan_res*PWR((v(TJ)+273)/298,gtc)) }

VSENSE_d 3_d drain DC 0

*

*

VSENSE_s 3_s source DC 0

ERES_s source3 3_s value={I(VSENSE_s)* sh_s * (metal_res*(1-1*rTc*(V(TJ)-25)) + gan_res*PWR((v(TJ)+273)/298,gtc)) }

Lcs source3 source3b {20e-12}

Ls sourcein source3b {150e-15} Rser=0

*

*

RSS source_S1 source3b {0.001}

LSS source_S source_S1 {0.2e-9} Rser=0

rg gatein gate1 {1.5}

Lg gate1 gate {3.1e-9} Rser=0

*

*

Rcsdconv drain source {4000Meg}

Rcgsconv gate source {4000Meg}

Rcgdconv gate drain {4000Meg}

*

*

bswitch drain2 source2 I = (if(v(drain2,source2)>0,

+   (cur*(-(v(TJ)-25)*itc+atc)*log(1.0+exp(26*(v(gate,source2)-thr)))*

+	v(drain2,source2)/(1 + max(x0_0+x0_1*(v(gate,source2)+x0_2),0.2)*v(drain2,source2))),

+   (-cur*(-(v(TJ)-25)*itc+atc)*log(1.0+exp(26*(v(gate,drain2)-thr)))*

+	v(source2, drain2)/(1 + max(x0_0+x0_1*(v(gate,drain2)+x0_2),0.2)*v(source2,drain2)))))

*

*

R_drain2 drain2 drain {(1e-7)}

R_source2 source2 source {(1e-7)}

*

*

*

C_GS	 gate source  	{6.04e-10}

C_GS1 gate source Q = ( - 14.08e-11*(1-1./(1+exp(0.32*(-v(drain, source)+8.0))))

+                       - 1.653e-11*(1-1./(1+exp(0.029*(-v(drain, source)+80.0))))

+    				    - 1.5e-10*(-1+1./(1+exp(0.16*(-v(drain, source)-2.1)))) )*x

*

*

C_GS2 gate source   Q = ( 1.0e-010*log(1+exp(6.1*(x-2.2))))

*

*

C_GD   gate drain  	{0.6e-012}

C_GD1  gate drain Q = ( 44e-11*log(1+exp(0.32*(x+8)))+

+					 57e-11*log(1+exp(0.029*(x+80))) )

*

*

C_SD	 source drain  	{2.18e-010}

C_SD1	source drain Q = ( 

+							44e-11*log(1+exp(0.32*(x+8)))+

+							57e-11*log(1+exp(0.029*(x+80)))+

+						   1.95e-10*log(1+exp(1.19*(x+16)))+

+						    1.69e-9*log(1+exp(0.07*(x+31))) )

*

*

.ends

*$