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1 florent_ba 1
* Created in LTspice Version XVII                               *
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*                                            					*
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* GaN Systems Inc. Power Transistors                            *
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* LTSpice Library for GaN Transistors                           *
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* Version 4.1                                                   *
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*                                                               *
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*****************************************************************
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*****************************************************************
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*                                                               *
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* Models provided by GaN Systems Inc. are not warranted by      *
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* GaN Systems Inc. as                                           *
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* fully representing all of the specifications and operating    *
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* characteristics of the semiconductor product to which the     *
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* model relates. The model describe the characteristics of a    *
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* typical device.                                               *
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* In all cases, the current data sheet information for a given  *
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* device is the final design guideline and the only actual      *
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* performance specification.                                    *
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* Altough models can be a useful tool in evaluating device      *
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* performance, they cannot model exact device performance under *
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* all conditions, nor are they intended to replace bread-       *
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* boarding for final verification. GaN Systems Inc. therefore   *
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* does not assume any liability arising from their use.         *
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* GaN Systems Inc. reserves the right to change models without  *
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* prior notice.                                                 *
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*                                                               *
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* This library contains models of the following GaN Systems     *
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* Inc. transistors:                                             *
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*                                                               *
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*   GS61008P                                                    *
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*****************************************************************
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*Level 3. In addition to Level 2, this level includes the stray inductance in the package.
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*$
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*$
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.subckt GaN_LTspice_GS61008P_L3V4P1 gatein drainin sourcein source_S TC TJ
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*
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*
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.param rTC=-0.004  gan_res={3.38e-03}		metal_res={2.0e-3}   gtc=3.275 sh_s=0.239   sh_d=0.761
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.param  cur=0.089   x0_0=1.1	  x0_1=1.1  x0_2=1.0  thr=1.8  itc=0.83 atc=180.15
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*
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*
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.param tscl = 0.5
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Cth_1 0 TJ {(7.0e-4)*tscl}
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Cth_2 0 T11  {(6.7e-3)*tscl}
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Cth_3 0 T22 {(5.9e-3)*tscl}
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Cth_4 0 T33 {(1.8e-3)*tscl}
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*
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*
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Rth_1 T11 TJ {0.017}
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Rth_2 T22 T11 {0.253}
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Rth_3 T33 T22 {0.264}
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Rth_4 TC T33 {0.017}
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*
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*
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bdtemp 0 TJ I = (if(v(drain,source)>0,
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+   (cur*(-(v(TJ)-25)*itc+atc)*log(1.0+exp(26*(v(gate,source)-thr)))*
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+	v(drain,source)/(1 + max(x0_0+x0_1*(v(gate,source)+x0_2),0.2)*v(drain,source)))*
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+	v(drain,source),
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+   (cur*(-(v(TJ)-25)*itc+atc)*log(1.0+exp(26*(v(gate,drain)-thr)))*
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+	v(source, drain)/(1 + max(x0_0+x0_1*(v(gate,drain)+x0_2),0.2)*v(source,drain)))*
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+	v(drain,source)))
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*
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*
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ld drainin drain3 {370e-12} Rser=0
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ERES_d drain3 3_d value={I(VSENSE_d)*sh_d* (metal_res*(1-1*rTc*(V(TJ)-25)) + gan_res*PWR((v(TJ)+273)/298,gtc)) }
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VSENSE_d 3_d drain DC 0
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*
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*
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VSENSE_s 3_s source DC 0
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ERES_s source3 3_s value={I(VSENSE_s)* sh_s * (metal_res*(1-1*rTc*(V(TJ)-25)) + gan_res*PWR((v(TJ)+273)/298,gtc)) }
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Lcs source3 source3b {20e-12}
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Ls sourcein source3b {150e-15} Rser=0
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*
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*
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RSS source_S1 source3b {0.001}
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LSS source_S source_S1 {0.2e-9} Rser=0
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rg gatein gate1 {1.5}
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Lg gate1 gate {3.1e-9} Rser=0
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*
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*
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Rcsdconv drain source {4000Meg}
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Rcgsconv gate source {4000Meg}
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Rcgdconv gate drain {4000Meg}
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*
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*
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bswitch drain2 source2 I = (if(v(drain2,source2)>0,
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+   (cur*(-(v(TJ)-25)*itc+atc)*log(1.0+exp(26*(v(gate,source2)-thr)))*
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+	v(drain2,source2)/(1 + max(x0_0+x0_1*(v(gate,source2)+x0_2),0.2)*v(drain2,source2))),
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+   (-cur*(-(v(TJ)-25)*itc+atc)*log(1.0+exp(26*(v(gate,drain2)-thr)))*
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+	v(source2, drain2)/(1 + max(x0_0+x0_1*(v(gate,drain2)+x0_2),0.2)*v(source2,drain2)))))
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*
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*
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R_drain2 drain2 drain {(1e-7)}
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R_source2 source2 source {(1e-7)}
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*
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*
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*
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C_GS	 gate source  	{6.04e-10}
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C_GS1 gate source Q = ( - 14.08e-11*(1-1./(1+exp(0.32*(-v(drain, source)+8.0))))
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+                       - 1.653e-11*(1-1./(1+exp(0.029*(-v(drain, source)+80.0))))
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+    				    - 1.5e-10*(-1+1./(1+exp(0.16*(-v(drain, source)-2.1)))) )*x
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*
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*
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C_GS2 gate source   Q = ( 1.0e-010*log(1+exp(6.1*(x-2.2))))
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*
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*
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C_GD   gate drain  	{0.6e-012}
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C_GD1  gate drain Q = ( 44e-11*log(1+exp(0.32*(x+8)))+
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+					 57e-11*log(1+exp(0.029*(x+80))) )
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*
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*
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C_SD	 source drain  	{2.18e-010}
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C_SD1	source drain Q = ( 
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+							44e-11*log(1+exp(0.32*(x+8)))+
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+							57e-11*log(1+exp(0.029*(x+80)))+
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+						   1.95e-10*log(1+exp(1.19*(x+16)))+
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+						    1.69e-9*log(1+exp(0.07*(x+31))) )
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*
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*
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.ends
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*$