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florent_ba |
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* Created in LTspice Version XVII *
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* *
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* GaN Systems Inc. Power Transistors *
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* LTSpice Library for GaN Transistors *
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* Version 4.1 *
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* *
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*****************************************************************
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*****************************************************************
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* *
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* Models provided by GaN Systems Inc. are not warranted by *
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* GaN Systems Inc. as *
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* fully representing all of the specifications and operating *
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* characteristics of the semiconductor product to which the *
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* model relates. The model describe the characteristics of a *
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* typical device. *
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* In all cases, the current data sheet information for a given *
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* device is the final design guideline and the only actual *
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* performance specification. *
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* Altough models can be a useful tool in evaluating device *
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* performance, they cannot model exact device performance under *
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* all conditions, nor are they intended to replace bread- *
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* boarding for final verification. GaN Systems Inc. therefore *
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* does not assume any liability arising from their use. *
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* GaN Systems Inc. reserves the right to change models without *
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* prior notice. *
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* *
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* This library contains models of the following GaN Systems *
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* Inc. transistors: *
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* *
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* GS61008P *
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*****************************************************************
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*Level 1. Optimized for simulation speed
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*$
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*$
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.subckt GaN_LTspice_GS61008P_L1V4P1 gatein drainin sourcein source_S
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*
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*
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.param rTC=-0.004 gan_res={3.38e-03} metal_res={2.0e-3} gtc=3.275 sh_s=0.239 sh_d=0.761
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.param cur=0.089 x0_0=1.1 x0_1=1.1 x0_2=1.0 thr=1.8 itc=0.83 atc=180.15
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*
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*
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rd drainin drain { sh_d* (metal_res/2.0*(1-1*rTc*(Temp-25)) + gan_res*PWR((Temp+273)/298,gtc)) }
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rs sourcein source { sh_s * (metal_res/2.0*(1-1*rTc*(Temp-25)) + gan_res*PWR((Temp+273)/298,gtc)) }
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RSS source_S source {0.001}
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rg gatein gate {1.5}
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*
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*
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Rcsdconv drain source {4000Meg}
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Rcgsconv gate source {4000Meg}
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Rcgdconv gate drain {4000Meg}
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*
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*
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bswitch drain2 source2 I = (if(v(drain2,source2)>0,
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+ (cur*(-(Temp-25)*itc+atc)*log(1.0+exp(26*(v(gate,source2)-thr)))*
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+ v(drain2,source2)/(1 + max(x0_0+x0_1*(v(gate,source2)+x0_2),0.2)*v(drain2,source2))),
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+ (-cur*(-(Temp-25)*itc+atc)*log(1.0+exp(26*(v(gate,drain2)-thr)))*
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+ v(source2, drain2)/(1 + max(x0_0+x0_1*(v(gate,drain2)+x0_2),0.2)*v(source2,drain2)))))
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*
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*
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R_drain2 drain2 drain {(1e-7)}
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R_source2 source2 source {(1e-7)}
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*
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*
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C_GS gate source {6.04e-10}
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C_GS1 gate source Q = ( - 14.08e-11*(1-1./(1+exp(0.32*(-v(drain, source)+8.0))))
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+ - 1.653e-11*(1-1./(1+exp(0.029*(-v(drain, source)+80.0))))
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+ - 1.5e-10*(-1+1./(1+exp(0.16*(-v(drain, source)-2.1)))) )*x
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*
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*
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C_GS2 gate source Q = ( 1.0e-010*log(1+exp(6.1*(x-2.2))))
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*
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*
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C_GD gate drain {0.6e-012}
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C_GD1 gate drain Q = ( 44e-11*log(1+exp(0.32*(x+8)))+
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+ 57e-11*log(1+exp(0.029*(x+80))) )
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*
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*
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C_SD source drain {2.18e-010}
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C_SD1 source drain Q = ( 44e-11*log(1+exp(0.32*(x+8)))+
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+ 57e-11*log(1+exp(0.029*(x+80)))+
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+ 1.95e-10*log(1+exp(1.19*(x+16)))+
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+ 1.69e-9*log(1+exp(0.07*(x+31))) )
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*
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*
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.ends
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*$
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